Influence of indium segregation on exciton recombination dynamics in InGaAs/GaAs quantum wells
Identifieur interne : 000113 ( Main/Exploration ); précédent : 000112; suivant : 000114Influence of indium segregation on exciton recombination dynamics in InGaAs/GaAs quantum wells
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Abstract
Low-temperature PL decay times, τPL, measured for a series of InxGa1−xAs/GaAs quantum wells (QWs) show an almost linear increase with increasing thickness (4≤Lz≤10 nm,x=0.15) and with increasing In composition (0.05≤x≤0.25,Lz=8 nm). τPL also increases linearly with temperature up to 50K, as expected for free excitons and does not exhibit the interface effects seen for GaAs/AlGaAs QWs. Wells with different In compositions exhibit a similar temperature behaviour and there is a weak influence of strain on the decay time.
DOI: 10.1007/BF02457254
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Yu</name><affiliation wicri:level="1"><mods:affiliation>IRC for Semiconductor Materials, The Blackett Laboratory, Imperial College, SW7 2BZ, London, UK</mods:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>IRC for Semiconductor Materials, The Blackett Laboratory, Imperial College, SW7 2BZ, London</wicri:regionArea><placeName><settlement type="city">Londres</settlement><region type="country">Angleterre</region><region type="région" nuts="1">Grand Londres</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11544_1995_Article_BF02457254.pdf</idno><date when="1995">1995</date><idno type="doi">10.1007/BF02457254</idno><idno type="wicri:Area/Main/Corpus">000026</idno><idno type="wicri:Area/Main/Curation">000026</idno><idno type="wicri:Area/Main/Exploration">000113</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Conference proceedings</term><term>III–V compounds and systems</term><term>III–V semiconductors</term><term>Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Acte de congrès</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Low-temperature PL decay times, τPL, measured for a series of InxGa1−xAs/GaAs quantum wells (QWs) show an almost linear increase with increasing thickness (4≤Lz≤10 nm,x=0.15) and with increasing In composition (0.05≤x≤0.25,Lz=8 nm). τPL also increases linearly with temperature up to 50K, as expected for free excitons and does not exhibit the interface effects seen for GaAs/AlGaAs QWs. 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